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Mohd Faiez Ali (MSc – Graduated)

 
Mohd Faiez Ali

Email: mohdfaiezali@gmail.com

Project Title: Theoretical Studies of GaInNaS Quantum Well Long Wavelength Semiconductor Laser

 

Summary:

Mohd Faiez Ali was born in Penang, Malaysia on July 7th 1986. He received Pre Science Certificate, Dip. Sc (Physics), BSc. (Hons) degree in Physics from Universiti Teknologi MARA (UiTM) in 2004, 2008, and 2010 respectively. Currently he is working toward the MSc. Degree in Physics from the same university. He started his research on the group III-V material system focusing on GaInNAs material for high power and long wavelength semiconductor lasers in 1.3µm range. In 2010 and 2012, he joined Telekom Malaysia Research & Development (TMR&D) team in Cyberjaya, Malaysia for internship and attachment program where he pursue his research on GaInNAs material system. His current research and interest involved theoretical modelling and experimental work of GainNAs material system

Publications/Presented Papers:

  • M.Faiez Ali, M.Kamil Abd-Rahman, M.Salleh Mohd Deni and M.S.Alias, “Simulation of High Power GaInNAs-GaNAs Double Quantum-well Laser Diodes for Raman Amplifier Pumping”, Progress in Electromagnetics Research Symposium Proceedings, KL, Malaysia, March 27-30, 2012